IndiumV3, Russie, Analysis, bibRecord, 000607

Separate electron-hole confinement in composite InAsyP1-y/GaxIn1-xAs quantum wells

Identifieur interne : 000607 ( Russie/Analysis ); précédent : 000606; suivant : 000608

Separate electron-hole confinement in composite InAsyP1-y/GaxIn1-xAs quantum wells

Auteurs : RBID : Pascal:03-0508624

Descripteurs français

Pascal (Inist)
- Photoconductivité, Confinement, Déplacement raie, Exciton localisé, Effet Stark, Séparation charge, Hamiltonien, Puits quantique multiple, Indium Phosphoarséniure, Gallium arséniure, Indium arséniure, Composé ternaire, Etude expérimentale, InAsyP1-y, As In P, GaxIn1-xAs, 7363H, As Ga In.

English descriptors

KwdEn :
- Charge separation, Confinement, Experimental study, Gallium arsenides, Hamiltonians, Indium Arsenides phosphides, Indium arsenides, Localized exciton, Multiple quantum well, Photoconductivity, Spectral line shift, Stark effect, Ternary compounds.

Abstract

Composite double quantum wells made from materials with a type-II band line-up have been grown to realize separate confinement in real space for electrons and holes. We have observed a substantial blue shift of the lowest energy transition in such composite double quantum wells. The photocurrent measurements demonstrate a linear Stark shift due to the separate confinement in real space for electrons and holes. The charge separation is up to 45 A in the strain balanced InAs_0.42P_0.58/Ga_0.67In_0.33As samples. The experimental results agree very well with calculations in the framework of Bir-Pikus strain Hamiltonian.

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Pascal:03-0508624

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Separate electron-hole confinement in composite InAs<sub>y</sub>
P<sub>1-y</sub>
/Ga<sub>x</sub>
In<sub>1-x</sub>
As quantum wells</title>
<author><name sortKey="Silov, A Yu" uniqKey="Silov A">A. Yu. Silov</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>COBRA Inter-University, Eindhoven University of Technology, P.O. Box 513</s1>
<s2>5600 MB Eindhoven</s2>
<s3>NLD</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>6 aut.</sZ>
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<country>Pays-Bas</country>
<wicri:noRegion>5600 MB Eindhoven</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Aneeshkumar, B" uniqKey="Aneeshkumar B">B. Aneeshkumar</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>COBRA Inter-University, Eindhoven University of Technology, P.O. Box 513</s1>
<s2>5600 MB Eindhoven</s2>
<s3>NLD</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>6 aut.</sZ>
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<country>Pays-Bas</country>
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<author><name sortKey="Leys, M R" uniqKey="Leys M">M. R. Leys</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Ghent University, Department of Information Technology, Sint Pietersnieuwstraat 41</s1>
<s2>9000 Ghent</s2>
<s3>BEL</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Belgique</country>
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</author>
<author><name sortKey="Averkiev, N S" uniqKey="Averkiev N">N. S. Averkiev</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Ioffe Physico-Technical Institute</s1>
<s2>St Petersburg</s2>
<s3>RUS</s3>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>Ioffe Physico-Technical Institute</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Christianen, P C M" uniqKey="Christianen P">P. C. M. Christianen</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Research Institute for Materials, High Field Magnet Laboratory, University of Nijmegen</s1>
<s2>6525 ED Nijmegen</s2>
<s3>NLD</s3>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Pays-Bas</country>
<wicri:noRegion>6525 ED Nijmegen</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Wolter, J H" uniqKey="Wolter J">J. H. Wolter</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>COBRA Inter-University, Eindhoven University of Technology, P.O. Box 513</s1>
<s2>5600 MB Eindhoven</s2>
<s3>NLD</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>6 aut.</sZ>
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<country>Pays-Bas</country>
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<seriesStmt><idno type="ISSN">1017-2653</idno>
<title level="j" type="main">SPIE proceedings series</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Charge separation</term>
<term>Confinement</term>
<term>Experimental study</term>
<term>Gallium arsenides</term>
<term>Hamiltonians</term>
<term>Indium Arsenides phosphides</term>
<term>Indium arsenides</term>
<term>Localized exciton</term>
<term>Multiple quantum well</term>
<term>Photoconductivity</term>
<term>Spectral line shift</term>
<term>Stark effect</term>
<term>Ternary compounds</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Photoconductivité</term>
<term>Confinement</term>
<term>Déplacement raie</term>
<term>Exciton localisé</term>
<term>Effet Stark</term>
<term>Séparation charge</term>
<term>Hamiltonien</term>
<term>Puits quantique multiple</term>
<term>Indium Phosphoarséniure</term>
<term>Gallium arséniure</term>
<term>Indium arséniure</term>
<term>Composé ternaire</term>
<term>Etude expérimentale</term>
<term>InAsyP1-y</term>
<term>As In P</term>
<term>GaxIn1-xAs</term>
<term>7363H</term>
<term>As Ga In</term>
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<front><div type="abstract" xml:lang="en">Composite double quantum wells made from materials with a type-II band line-up have been grown to realize separate confinement in real space for electrons and holes. We have observed a substantial blue shift of the lowest energy transition in such composite double quantum wells. The photocurrent measurements demonstrate a linear Stark shift due to the separate confinement in real space for electrons and holes. The charge separation is up to 45 A in the strain balanced InAs<sub>0.42</sub>
P<sub>0.58</sub>
/Ga<sub>0.67</sub>
In<sub>0.33</sub>
As samples. The experimental results agree very well with calculations in the framework of Bir-Pikus strain Hamiltonian.</div>
</front>
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P<sub>1-y</sub>
/Ga<sub>x</sub>
In<sub>1-x</sub>
As quantum wells</s1>
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<s9>ed.</s9>
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<fA14 i1="01"><s1>COBRA Inter-University, Eindhoven University of Technology, P.O. Box 513</s1>
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<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>6 aut.</sZ>
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<fA14 i1="02"><s1>Ghent University, Department of Information Technology, Sint Pietersnieuwstraat 41</s1>
<s2>9000 Ghent</s2>
<s3>BEL</s3>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Ioffe Physico-Technical Institute</s1>
<s2>St Petersburg</s2>
<s3>RUS</s3>
<sZ>4 aut.</sZ>
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<fA14 i1="04"><s1>Research Institute for Materials, High Field Magnet Laboratory, University of Nijmegen</s1>
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<s3>NLD</s3>
<sZ>5 aut.</sZ>
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<fA18 i1="01" i2="1"><s1>International Society for Optical Engineering</s1>
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<fC01 i1="01" l="ENG"><s0>Composite double quantum wells made from materials with a type-II band line-up have been grown to realize separate confinement in real space for electrons and holes. We have observed a substantial blue shift of the lowest energy transition in such composite double quantum wells. The photocurrent measurements demonstrate a linear Stark shift due to the separate confinement in real space for electrons and holes. The charge separation is up to 45 A in the strain balanced InAs<sub>0.42</sub>
P<sub>0.58</sub>
/Ga<sub>0.67</sub>
In<sub>0.33</sub>
As samples. The experimental results agree very well with calculations in the framework of Bir-Pikus strain Hamiltonian.</s0>
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<s5>07</s5>
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<s5>07</s5>
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<s5>08</s5>
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<s5>08</s5>
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<s2>NA</s2>
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<fC03 i1="09" i2="X" l="ENG"><s0>Indium Arsenides phosphides</s0>
<s2>NC</s2>
<s2>NA</s2>
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<fC03 i1="09" i2="X" l="SPA"><s0>Fosfoarseniuro</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>10</s5>
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<fC03 i1="10" i2="3" l="FRE"><s0>Gallium arséniure</s0>
<s2>NK</s2>
<s5>11</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>11</s5>
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<fC03 i1="11" i2="3" l="FRE"><s0>Indium arséniure</s0>
<s2>NK</s2>
<s5>12</s5>
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<fC03 i1="11" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>12</s5>
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<fC03 i1="12" i2="3" l="FRE"><s0>Composé ternaire</s0>
<s5>13</s5>
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<s5>14</s5>
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<fC03 i1="14" i2="3" l="FRE"><s0>InAsyP1-y</s0>
<s4>INC</s4>
<s5>53</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>As In P</s0>
<s4>INC</s4>
<s5>54</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>GaxIn1-xAs</s0>
<s4>INC</s4>
<s5>55</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>7363H</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
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<fC03 i1="18" i2="3" l="FRE"><s0>As Ga In</s0>
<s4>INC</s4>
<s5>92</s5>
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<s5>48</s5>
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<s5>48</s5>
</fC07>
<fN21><s1>335</s1>
</fN21>
<fN82><s1>PSI</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>International symposium on nanostructures</s1>
<s3>St. Petersburg RUS</s3>
<s4>2002-06-17</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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Separate electron-hole confinement in composite InAsyP1-y/GaxIn1-xAs quantum wells

Separate electron-hole confinement in composite InAsyP1-y/GaxIn1-xAs quantum wells

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri